By O'Mara W. C., Herring R. B., Hunt L. P.
This guide is a accomplished precis of the technological know-how, expertise and production of semiconductor silicon fabrics. each recognized estate of silicon is distinct. an entire set of binary section diagrams is incorporated. sensible points comparable to fabrics dealing with, defense, impurity and disorder aid also are mentioned in depth.Fundamentals within the parts of silicon precursor compounds, polysilicon, silicon crystal progress, wafer fabrication, epitaxial and CVD deposition are addressed through specialists in those fields. fabrics homes coated comprise electric, optical and mechanical houses, deep point impurities and service lifetime, and thermochemistry, in addition to particular sections on oxygen, carbon, and nitrogen impurities. The publication comprises an intensive set of references, tables of fabrics constants, and silicon houses, and a presentation at the state-of-the-art of fabrics production.
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Additional info for Handbook of Semiconductor Silicon Technology
Since a more reliable value for Hf"298 of Sic14 is now recognized (33), revisions were made in the standard enthalpies of formation of SiHC1-j and Sic12 which have their values based upon that of SiC14. These revisions appear in the updated JANAF Tables (33). Walsh (35) reviewed Hf"298 for the chlorosilanes and agreed that the JANAF data were reasonable except that for SiHC13. Three experimental values exist for SiHC13 in addition to the value reported by Hunt and Sirtl (34). Silicon Precursors: Their Manufacture and Properties 15 These are listed in Table 5 .
Electrochem. SOC. Vol 129, pp. 2346-2349 (1982) 41. , "Development of a Polysilicon Process Based on Chemical Vapor Deposition," Quarterly Report DOE/JPL Contract 955533-8 1-6, Nat. Tech. Inform. Center, Springfield, VA (1981) 42. , "Dichlorosilane-Leak Spill and Fire Control," In: Extended Abstracts. The Electrochem. , Pennington, New Jersey, Vol 85-2, p. 454 (1985) 43. , "Discharge of Silane in Open Air and in Toxic Gas Cabinets," ibid. p. 456 44. , "Development of High Purity Gas Systems Programs," ibid.
A more complex technique was required to estimate the surface tension of SiH2C12. This technique showed good accuracy when used to compare estimated data for SiHC13 and Sic14 were compared to experimental data. Surface tension data for the compounds are plotted as a function of temperature in Figure 11. Silicon Precursors: Their Manufacture and Properties 21 . -0fn C F aJ 0 s L 3 v) Temperature, K Figure 11. Estimated critical points. 9 Viscosity (Gas) Viscosity data were reviewed for the gaseous silanes by No viscosity data were available for Yaws et al.
Handbook of Semiconductor Silicon Technology by O'Mara W. C., Herring R. B., Hunt L. P.