Download PDF by Hamid Bentarzi: Transport in Metal-Oxide-Semiconductor Structures: Mobile

By Hamid Bentarzi

ISBN-10: 3642163033

ISBN-13: 9783642163036

This publication makes a speciality of the significance of cellular ions offered in oxide constructions, what considerably impacts the metal-oxide-semiconductor (MOS) houses. The examining starts off with the definition of the MOS constitution, its quite a few points and varieties of fees provided of their constitution. A evaluation on ionic delivery mechanisms and strategies for measuring the cellular ions focus within the oxides is given, exact cognizance being tried to the cost Pumping (CP) procedure linked to the prejudice Thermal rigidity (BTS) approach. Theoretical ways to figure out the density of cellular ions in addition to their distribution alongside the oxide thickness also are mentioned. The content material varies from common to very particular examples, supporting the reader to benefit extra approximately delivery in MOS structures.

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Additional resources for Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties

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The risk of contamination is also high. Flash System A flash system is similar in design to a bubbler. A small amount of de-ionized water is dropped on a heated quartz surface where it instantly turns into steam. A carrier gas moves the steam into the heated oxidation chamber. As with the bubbler, it is very difficult to achieve a constant rate of oxide growth. Unlike a bubbler, however, the flask is never opened in a flash system so the risk of contamination is low. 3 Thermal Oxidation 21 Dryox System In a Dryox system, oxygen and hydrogen directly enter a heated oxidation tube.

Nicollian and Goetzberger [17], and Brown and Gray [18] have reported data that indicate that the distribution of interface trapped charges across the silicon band-gap typically exhibits peaks near both band edges with a pronounced and uniform minimum occurring near the center of the forbidden region. Brown and Gray [17] have found that, the observed density of interface trapped charges as a function of silicon substrate orientation decreases in the order (111) [ (110) [ (100). 1 Characteristic of different types of oxide charges Properties Types Interface trapped Oxide trapped charge charge Location Charges Causes Dependence on VG Charging state Density determination method Degradation At Si–SiO2 interface Positive/ negative Structural, Metal impurities Within the oxide bulk Positive/negative Ionizing radiations, Avalanche injection Fixed trapped charge Mobile ionic charge Near Si–SiO2 Within the interface oxide bulk Positive Positive Structural It depends on VG It does not depend on VG It does not depend on VG Charged and Charged and discharged Fixed discharged under specific by VG conditions LF C–V, HF C–V, HF C–V Conductance, Photo I–V CP Hot-carriers Radiation and hot-carriers – Ionic impurities (Na+, K+…) It does not depend on VG Fixed below 390°C BTS, TVS, TSIC Thermal and electric stress BTS bias-thermal stress, TVS triangular voltage sweep, CP charge-pumping, TSIC thermally stimulated ionic current At high frequency, the presence of interface-trapped charges does not modify the value of the overall high frequency capacitance but only the relationship between C and VG.

This phenomenon, however, has been used to determine the oxide thickness, as the oscillation period is dependent on the tunneling barrier thickness [10]. FN-current causes also some stress on the oxide which in turn changes oxide charges density that becomes unstable upon continuing electrical measurement [11]. This, further, causes instability, possibly making it more difficult to define the material parameters. 4 The Frenkel-Poole Conduction The Frenkel-Poole emission is due to the field-enhanced thermal excitations of the trapped electrons into the conduction band.

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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties by Hamid Bentarzi

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